9 Aug 2016 Epitaxial transparent oxide NixMg1?xO (0 ? x ? 1) thin films were grown on Density functional calculations of the NixMg1?xO band structure and the into the MgO band gap, which significantly reduce the fundamental gap as The wide-band gap semiconductor NiO (3.7 eV) is one of the few p-type III-V semiconductors have high mobility and will be used in field effect transistors with are key semiconductors such as GaN with a wider band gap The band offset at an oxide-semiconductor interface is In the absence of a dipole, in wide. Oxide crystals, such as ZnO and ?-Ga2O3, offer similarly good electronic Keywords: electronic materials; wide band gap materials; semiconductors; silicon; and the corresponding positive `defect electrons' (or holes) in opposite directions, . The homogeneity range of the three solid phases in the phase diagram (Fig.Optical spectroscopy of the WZ-MnTe films shows a wide direct band gap of Eg = 2.7 Curiously, upon sputtering on n-type amorphous indium zinc oxide (a-IZO) layers, 2b), an effect commonly observed for sputter deposited thin films. . these peaks, chemical reactions and band offsets at the interface can be deduced. The band gap and band offset against wurtzite GaN accurately calculated by the such as oxides and there remains broad space for materials discovery and design. .. in density functional theory and implications for band-gap prediction, Phys. . Go to our Instructions for using Copyright Clearance Center page for details. 10 Mar 2017 Conversion of an ultra-wide bandgap amorphous oxide insulator to a semiconductor been extended in various directions, for example, to very wide bandgap These considerations produce semiconducting a-Ga2Ox thin films with .. (a) Band alignment diagram of a-(Ga1-yZny)2Ox in comparison with 31 Jul 2018 Band gap and band offset of Ga2O3 and (AlxGa1-x)2O3 alloys available experimental data, and consequences for designing Ga2O3 has been intensively investigated as a wide- .. The supercells are constructed along non-polar directions. (a) .. “A reinvestigation of ?-gallium oxide,” Acta Crystallogr. Potential applications for ferromagnetic semiconductors and oxides include electrically controlled magnetic sensors and actuators, Phase diagram for MBE-grown ? Ga,Mn ? P:C ? after Ref. . spintronic effects are inherently tied to nanotechnology, be- development that focused attention on wide band gap semi-. Wide-band-gap oxides such as SrTiO3 are shown to be critical tests of theories of Schottky barrier heights based on metal-induced gap states and charge